ELp740: Difference between revisions
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| credits = 3 | | credits = 3 | ||
| credit_structure = 0-0-6 | | credit_structure = 0-0-6 | ||
| pre_requisites = Any one of :ELL732/ELL740/ELL211/ELL231/ | | pre_requisites = Any one of :[[ELL732]]/[[ELL740]]/[[ELL211]]/[[ELL231]]/ | ||
| overlaps = | | overlaps = | ||
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== ELp740 : On-wafer Device Characterization Laboratory == | == ELp740 : On-wafer Device Characterization Laboratory == | ||
CRL621/CRL722/CRL621/PYL306/PYL653/PYL702/MLL738 Semiconductor parameter analyzer and SCPI, Measurements of on- wafer test structures using wafer prober, Measurements of packaged (SMT) devices using packaged IC tester, p-n junction diode DC IV & CV characterization at room temperature and model parameter extraction, p-n junction diode DC IV & CV characterization at higher temperatures, MOS capacitor CV characterization at room temperature, MOSFET DC ld-Vg and ld-Vd characterization at room temperature, MOSFET DC characterization using Cryogenic Probe Station, RF characterization using 2-port S-parameters, MOSF.ET RF characterization at room temperature, MOSFET large-signal RF characterization using load-pull method, MOSFET Flicker noise characterization at room temperature, Lab project. | [[CRL621]]/[[CRL722]]/[[CRL621]]/[[PYL306]]/[[PYL653]]/[[PYL702]]/[[MLL738]] Semiconductor parameter analyzer and SCPI, Measurements of on- wafer test structures using wafer prober, Measurements of packaged (SMT) devices using packaged IC tester, p-n junction diode DC IV & CV characterization at room temperature and model parameter extraction, p-n junction diode DC IV & CV characterization at higher temperatures, MOS capacitor CV characterization at room temperature, MOSFET DC ld-Vg and ld-Vd characterization at room temperature, MOSFET DC characterization using Cryogenic Probe Station, RF characterization using 2-port S-parameters, MOSF.ET RF characterization at room temperature, MOSFET large-signal RF characterization using load-pull method, MOSFET Flicker noise characterization at room temperature, Lab project. | ||
Latest revision as of 16:33, 14 April 2026
| ELp740 | |
|---|---|
| On-wafer Device Characterization Laboratory | |
| Credits | 3 |
| Structure | 0-0-6 |
| Pre-requisites | Any one of :ELL732/ELL740/ELL211/ELL231/ |
| Overlaps | |
ELp740 : On-wafer Device Characterization Laboratory
CRL621/CRL722/CRL621/PYL306/PYL653/PYL702/MLL738 Semiconductor parameter analyzer and SCPI, Measurements of on- wafer test structures using wafer prober, Measurements of packaged (SMT) devices using packaged IC tester, p-n junction diode DC IV & CV characterization at room temperature and model parameter extraction, p-n junction diode DC IV & CV characterization at higher temperatures, MOS capacitor CV characterization at room temperature, MOSFET DC ld-Vg and ld-Vd characterization at room temperature, MOSFET DC characterization using Cryogenic Probe Station, RF characterization using 2-port S-parameters, MOSF.ET RF characterization at room temperature, MOSFET large-signal RF characterization using load-pull method, MOSFET Flicker noise characterization at room temperature, Lab project.