CRL722
| CRL722 | |
|---|---|
| RF and Microwave Solid State Devices | |
| Credits | 3 |
| Structure | 3-0-0 |
| Pre-requisites | |
| Overlaps | |
CRL722 : RF and Microwave Solid State Devices
[edit]Review of basics of semiconductor devices. Schottky diode, qualitative description, junction properties, I-V characteristics in forward and reverse biased diodes, high frequency application of Schottky diode, Schotty barrier gate FET. GaAs MESFET I-V characteristics, High Electron Mobility Transistor (HEMT), Hetro-structures, SOI technologies and MOSFETs, Fabrication technologies for GaAs MESFET, MBE, Ion Implantation. Pattern transfer at sub-micron level.