ELL211
| ELL211 | |
|---|---|
| physical Electronics | |
| Credits | 3 |
| Structure | 3-0-0 |
| Pre-requisites | ELL101 and PYL101 |
| Overlaps | ELL732, ELL231, EPL336, EPL439 , PHL653, |
ELL211 : physical Electronics
[edit]PHL704, PHL705, PHL727, PHL793 Semiconductor materials , crystal structure, carriers in semiconductors, band structure, density of states, excitons, doping and carrier statistics, carrier transport, recombination and generation, p-n junction physics: built-in potential, forward and reverse bias, capacitance, diode currents, breakdown, tunnel effects; metal-semiconductor junctions; BJTs: current gain/Gummel plots, transistor models, breakdown;MOSFET physics: MOS capacitors, inversion, depletion, accumulation, flatband, threshold voltage, long-channel model, saturation, short-channel models, sub-threshold conduction, SPICE models for MOSFETs; optoelectronic device physics, LEDs/OLEDs, lasers, photodetectors, solar cells.