ELL316: Difference between revisions
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| credit_structure = 3-0-0 | | credit_structure = 3-0-0 | ||
| pre_requisites = ELL211 | | pre_requisites = [[ELL211]] | ||
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Latest revision as of 16:30, 14 April 2026
| ELL316 | |
|---|---|
| Introduction to VLSI Design | |
| Credits | 3 |
| Structure | 3-0-0 |
| Pre-requisites | ELL211 |
| Overlaps | |
ELL316 : Introduction to VLSI Design
Basic MOS characteristics; Deep sub-micron; velocity saturation; Dynamic MOS characteristics; parasitics; leakage; sizing; propagation delay; Logical effort, path delay, optimization; Ratio-ed logic, Pass transistor logic and parasitics; Dynamic logic, pulsed sequential logic; Logical synthesis, physical design, layout; Introduction to design of VLSI memories.