ELL211: Difference between revisions
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| credits = 3 | | credits = 3 | ||
| credit_structure = 3-0-0 | | credit_structure = 3-0-0 | ||
| pre_requisites = ELL101 and PYL101 | | pre_requisites = [[ELL101]] and [[PYL101]] | ||
| overlaps = ELL732, ELL231, EPL336, EPL439 , PHL653, | | overlaps = [[ELL732]], [[ELL231]], [[EPL336]], [[EPL439]] , [[PHL653]], | ||
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== ELL211 : physical Electronics == | == ELL211 : physical Electronics == | ||
PHL704, PHL705, PHL727, PHL793 Semiconductor materials , crystal structure, carriers in semiconductors, band structure, density of states, excitons, doping and carrier statistics, carrier transport, recombination and generation, p-n junction physics: built-in potential, forward and reverse bias, capacitance, diode currents, breakdown, tunnel effects; metal-semiconductor junctions; BJTs: current gain/Gummel plots, transistor models, breakdown;MOSFET physics: MOS capacitors, inversion, depletion, accumulation, flatband, threshold voltage, long-channel model, saturation, short-channel models, sub-threshold conduction, SPICE models for MOSFETs; optoelectronic device physics, LEDs/OLEDs, lasers, photodetectors, solar cells. | [[PHL704]], [[PHL705]], [[PHL727]], [[PHL793]] Semiconductor materials , crystal structure, carriers in semiconductors, band structure, density of states, excitons, doping and carrier statistics, carrier transport, recombination and generation, p-n junction physics: built-in potential, forward and reverse bias, capacitance, diode currents, breakdown, tunnel effects; metal-semiconductor junctions; BJTs: current gain/Gummel plots, transistor models, breakdown;MOSFET physics: MOS capacitors, inversion, depletion, accumulation, flatband, threshold voltage, long-channel model, saturation, short-channel models, sub-threshold conduction, SPICE models for MOSFETs; optoelectronic device physics, LEDs/OLEDs, lasers, photodetectors, solar cells. | ||
Latest revision as of 16:30, 14 April 2026
| ELL211 | |
|---|---|
| physical Electronics | |
| Credits | 3 |
| Structure | 3-0-0 |
| Pre-requisites | ELL101 and PYL101 |
| Overlaps | ELL732, ELL231, EPL336, EPL439 , PHL653, |
ELL211 : physical Electronics
PHL704, PHL705, PHL727, PHL793 Semiconductor materials , crystal structure, carriers in semiconductors, band structure, density of states, excitons, doping and carrier statistics, carrier transport, recombination and generation, p-n junction physics: built-in potential, forward and reverse bias, capacitance, diode currents, breakdown, tunnel effects; metal-semiconductor junctions; BJTs: current gain/Gummel plots, transistor models, breakdown;MOSFET physics: MOS capacitors, inversion, depletion, accumulation, flatband, threshold voltage, long-channel model, saturation, short-channel models, sub-threshold conduction, SPICE models for MOSFETs; optoelectronic device physics, LEDs/OLEDs, lasers, photodetectors, solar cells.