MLL738: Difference between revisions
| [checked revision] | [checked revision] |
Prashantt492 (talk | contribs) Creating course page via bot |
Bot: wrap bare course codes in wikilinks |
||
| Line 4: | Line 4: | ||
| credits = 3 | | credits = 3 | ||
| credit_structure = 3-0-0 | | credit_structure = 3-0-0 | ||
| pre_requisites = PYL100, MLL211 or equivalent for UG | | pre_requisites = [[PYL100]], [[MLL211]] or equivalent for UG | ||
| overlaps = | | overlaps = | ||
}} | }} | ||
Latest revision as of 16:40, 14 April 2026
| MLL738 | |
|---|---|
| Electronic Devices and Characterization | |
| Credits | 3 |
| Structure | 3-0-0 |
| Pre-requisites | PYL100, MLL211 or equivalent for UG |
| Overlaps | |
MLL738 : Electronic Devices and Characterization
Overview of semiconductor fundamentals, Semiconductor junctions, Solar cells and LEDs, Metal – Semiconductor junctions: Schottky and Ohmic contacts, Thermionic-emission, Capacitance (C)– Voltage(V) measurements: Doping-Density and majority carrier density profiling, Metal-insulator-semiconductor junctions: MOS capacitor, C-V characteristics; Introduction to MOSFETs; Fin-FET MOSFET, Inverted field effect transistors and characterization of thin films. Defects as recombination-generation centres or traps; Measurement of defect density using Capacitance measurements (C-t), Steady and transient measurement Current measurement and Deep Level Transient Spectroscopy (DLTS), Charge Carrier Life time and diffusion length: Generation and Recombination life time, Surface generation and recombination velocity; Photoconductance decay; Photoluminescence Decay.