PYL724: Difference between revisions
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== pYL724 : Advances in Spintronics == | == pYL724 : Advances in Spintronics == | ||
Overlap with : PYL422 and PYL652 Spin dependent transport in magnetic metals - Anisotropic Magnetoresistance, Giant Magnetoresistance, Spin dependent tunneling, Tunneling magnetoresistance, Spin-Orbit interaction and Hall effects –Spin Hall Effect and Inverse Spin Hall Effect; Spin injection phenomena and applications - Spin Transfer Torque, Spin injection magnetization reversal; High frequency phenomena; Spin Transfer Torque applications, Dilute magnetic semiconductors, Spintronic properties of ferromagnetic semiconductors, Materials for Spin Electronics, Spintronic devices and their applications. | Overlap with : [[PYL422]] and [[PYL652]] Spin dependent transport in magnetic metals - Anisotropic Magnetoresistance, Giant Magnetoresistance, Spin dependent tunneling, Tunneling magnetoresistance, Spin-Orbit interaction and Hall effects –Spin Hall Effect and Inverse Spin Hall Effect; Spin injection phenomena and applications - Spin Transfer Torque, Spin injection magnetization reversal; High frequency phenomena; Spin Transfer Torque applications, Dilute magnetic semiconductors, Spintronic properties of ferromagnetic semiconductors, Materials for Spin Electronics, Spintronic devices and their applications. | ||
Latest revision as of 16:44, 14 April 2026
| pYL724 | |
|---|---|
| Advances in Spintronics | |
| Credits | 3 |
| Structure | 3-0-0 |
| Pre-requisites | |
| Overlaps | |
pYL724 : Advances in Spintronics
Overlap with : PYL422 and PYL652 Spin dependent transport in magnetic metals - Anisotropic Magnetoresistance, Giant Magnetoresistance, Spin dependent tunneling, Tunneling magnetoresistance, Spin-Orbit interaction and Hall effects –Spin Hall Effect and Inverse Spin Hall Effect; Spin injection phenomena and applications - Spin Transfer Torque, Spin injection magnetization reversal; High frequency phenomena; Spin Transfer Torque applications, Dilute magnetic semiconductors, Spintronic properties of ferromagnetic semiconductors, Materials for Spin Electronics, Spintronic devices and their applications.