PYL653: Difference between revisions
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| credits = 3 | | credits = 3 | ||
| credit_structure = 3-0-0 | | credit_structure = 3-0-0 | ||
| pre_requisites = PYL563 or equivalent | | pre_requisites = [[PYL563]] or equivalent | ||
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Latest revision as of 16:44, 14 April 2026
| pYL653 | |
|---|---|
| Semiconductor Electronics | |
| Credits | 3 |
| Structure | 3-0-0 |
| Pre-requisites | PYL563 or equivalent |
| Overlaps | |
pYL653 : Semiconductor Electronics
Semiconductors junction review; charge storage and transient behavior, equivalent circuit of diode, p-n hetero-structure: band discontinuity and its effect on junction properties; Junction breakdown mechanisms; Static characteristics of Bipolar transistor; Frequency response and switching behavior, Non-ideal effects: base width modulation, early effect, current crowding and high injection effect; Hetero-junction transistor; SCR, M-S junctions: Basic structure, Energy band relation, I-V characteristics; Ohmic contacts; MOS capacitors, JFET and MESFET basic principles, MOSFET: structure and operation, basic characteristics and analysis; linear quadratic model; equivalent circuit; Threshold voltage calculation; Substrate biasing effect; LED, Laser, Photodiode and solar cells, Tunnel, IMPATT & Gunn diodes and comparison of microwave devices.