PYL312: Difference between revisions
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| credit_structure = 3-0-0 | | credit_structure = 3-0-0 | ||
| pre_requisites = PYL125 | | pre_requisites = [[PYL125]] | ||
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Latest revision as of 16:43, 14 April 2026
| pYL312 | |
|---|---|
| Semiconductor Optoelectronics | |
| Credits | 3 |
| Structure | 3-0-0 |
| Pre-requisites | PYL125 |
| Overlaps | |
pYL312 : Semiconductor Optoelectronics
Energy bands in solids, density of states, occupation probability, Fermi level and quasi Fermi levels, p-n junctions, Semiconductor optoelectronic materials, bandgap modification, Heterostructures and Quantum Wells. Rates of emission and absorption, condition for amplification by stimulated emission, the laser amplifier. Semiconductor Photon Sources: Electroluminescence. The LED, Semiconductor Laser, Single-frequency lasers; DFB and DBR lasers, VCSEL; Quantum-well lasers and quantum cascade lasers. Laser diode arrays. Semiconductor optical amplifiers (SOA), Electro-absorption modulators based on FKE and QCSE. Semiconductor Photodetectors: Types of photodetectors, Photoconductors, Photodiodes, PIN diodes and APDs. Quantum well infrared photodetectors (QWIP); Noise in photodetection; Photonic integrated circuits (PICs).