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	<updated>2026-04-09T10:55:26Z</updated>
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		<title>Prashantt492: Creating course page via bot</title>
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		<updated>2026-03-04T10:20:23Z</updated>

		<summary type="html">&lt;p&gt;Creating course page via bot&lt;/p&gt;
&lt;p&gt;&lt;b&gt;New page&lt;/b&gt;&lt;/p&gt;&lt;div&gt;{{Infobox Course&lt;br /&gt;
| code = CRL722&lt;br /&gt;
| name = RF and Microwave Solid State Devices&lt;br /&gt;
| credits = 3&lt;br /&gt;
| credit_structure = 3-0-0&lt;br /&gt;
| pre_requisites = &lt;br /&gt;
| overlaps = &lt;br /&gt;
}}&lt;br /&gt;
&lt;br /&gt;
== CRL722 : RF and Microwave Solid State Devices ==&lt;br /&gt;
Review of basics of semiconductor devices. Schottky diode, qualitative description, junction properties, I-V characteristics in forward and reverse biased diodes, high frequency application of Schottky diode, Schotty barrier gate FET. GaAs MESFET I-V characteristics, High Electron Mobility Transistor (HEMT), Hetro-structures, SOI technologies and MOSFETs, Fabrication technologies for GaAs MESFET, MBE, Ion Implantation. Pattern transfer at sub-micron level.&lt;/div&gt;</summary>
		<author><name>Prashantt492</name></author>
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