https://wiki.devclub.in/index.php?action=history&feed=atom&title=CRL621 2026-04-09T07:49:11Z Revision history for this page on the wiki MediaWiki 1.45.1 https://wiki.devclub.in/index.php?title=CRL621&diff=2045&oldid=prev 2026-03-04T10:20:15Z

<p>Creating course page via bot</p> <p><b>New page</b></p><div>{{Infobox Course<br /> | code = CRL621<br /> | name = Fundamentals of Semiconductor Devices<br /> | credits = 3<br /> | credit_structure = 3-0-0<br /> | pre_requisites = <br /> | overlaps = <br /> }}<br /> <br /> == CRL621 : Fundamentals of Semiconductor Devices ==<br /> Si Crystal structure, crystal planes and directions, band formation in semiconductors, direct and indirect gap semiconductors, E-k diagram, concept of “hole” as charge particle, effective mass, carrier mobility, life time of carriers, recombination, doping of semiconductors, drift and diffusion currents in semiconductors, metal-semiconductor junctions, ohmic and non-ohmic contacts, Schottky diode, abrupt p-n junction, energy- band diagram, junction under zero-bias, forward bias and reverse bias; current calculations, break-down in p-n junction, diffused p-n junction; bipolar transistor: theory and operation; theory of MOS FET, ideal MOSFET, threshold voltage, sub-threshold conduction in MOSFET, C-V characteristics of MOS capacitor, short- channel effects.</div>

Prashantt492